background image

CNY75(G) Series

Vishay Telefunken

Rev. A4, 11–Jan–99

141

Optocoupler with Phototransistor Output

Description

The CNY75(G) series consists of a phototransistor

optically coupled to a gallium arsenide infrared-

emitting diode in a 6-lead plastic dual inline package.

The elements are mounted on one leadframe using

a  coplanar technique, providing a fixed distance

between input and output for highest safety

requirements.

Applications

Circuits for safe protective separation against

electrical shock according to safety class II

(reinforced isolation):

D

For appl. class I – IV at mains voltage 

 300 V

D

For appl. class I – III at mains voltage 

 600 V

according to VDE 0884, table 2, suitable for:

Switch-mode power supplies, line receiver, com-

puter peripheral interface, microprocessor

system interface.

VDE Standards

These couplers perform safety functions according

to the following equipment standards:

D

VDE 0884 

Optocoupler for electrical safety requirements

D

IEC 950/EN 60950 

Office machines (applied for reinforced isolation

for mains voltage 

 400 V

RMS

)

D

VDE 0804 

Telecommunication apparatus and data

processing

D

IEC 65 

Safety for mains-operated electronic and related

household apparatus

14827

6

5

4

2

3

1

C

E

A (+) C (–)

n.c.

95 10805

B

Order Instruction 

Ordering Code

CTR Ranking

Remarks

CNY75A/ CNY75GA

1)

63 to 125%

CNY75B/ CNY75GB

1)

100 to 200%

CNY75C/ CNY75GC

1)

160 to 320%

1) 

G = Leadform 10.16 mm; G is not market on the body

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CNY75(G) Series

Vishay Telefunken

Rev. A4, 11–Jan–99

142

Features 

Approvals: 

D

BSI: BS EN 41003, BS EN 60095 (BS 415), 

BS EN 60950 (BS 7002), 

Certificate number 7081 and 7402

D

FIMKO (SETI): EN 60950, 

Certificate number 12399

D

Underwriters Laboratory (UL) 1577 recognized,

file number E-76222

D

VDE 0884, Certificate number 94778

VDE 0884 related features: 

D

Rated impulse voltage (transient overvoltage)

V

IOTM

 = 6 kV peak

D

Isolation test voltage 

(partial discharge test voltage) V

pd

 = 1.6 kV

D

Rated isolation voltage (RMS includes DC)

V

IOWM

 = 600 V

RMS

 (848 V peak)

D

Rated recurring peak voltage (repetitive) 

V

IORM

 = 600 V

RMS

D

Creepage current resistance according to 

VDE 0303/IEC 112 

Comparative Tracking Index: CTI = 275

D

Thickness through insulation 

 0.75 mm

General features: 

D

Isolation materials according to UL94-VO

D

Pollution degree 2 

(DIN/VDE 0110 part 1 resp. IEC 664)

D

Climatic classification 55/100/21 (IEC 68 part 1)

D

Special construction: 

Therefore, extra low coupling capacity of 

typical 0.3 pF, high Common Mode Rejection

D

Low temperature coefficient of CTR

D

CTR offered in 3 groups

D

Coupling System A

Absolute Maximum Ratings

Input (Emitter)

Parameter

Test Conditions

Symbol

Value

Unit

Reverse voltage

V

R

5

V

Forward current

I

F

60

mA

Forward surge current

t

p

 

 10 

m

s

I

FSM

3

A

Power dissipation

T

amb

 

 25

°

C

P

V

100

mW

Junction temperature

T

j

125

°

C

Output (Detector)

Parameter

Test Conditions

Symbol

Value

Unit

Collector base voltage

V

CBO

90

V

Collector emitter voltage

V

CEO

90

V

Emitter collector voltage

V

ECO

7

V

Collector current

I

C

50

mA

Collector peak current

t

p

/T = 0.5, t

p

 

 10 ms

I

CM

100

mA

Power dissipation

T

amb

 

 25

°

C

P

V

150

mW

Junction temperature

T

j

125

°

C

Coupler

Parameter

Test Conditions

Symbol

Value

Unit

AC isolation test voltage (RMS)

t = 1 min

V

IO

3.75

kV

Total power dissipation

T

amb

 

 25

°

C

P

tot

250

mW

Ambient temperature range

T

amb

–55 to +100

°

C

Storage temperature range

T

stg

–55 to +125

°

C

Soldering temperature

2 mm from case, t 

 10 s

T

sd

260

°

C

background image

CNY75(G) Series

Vishay Telefunken

Rev. A4, 11–Jan–99

143

Electrical Characteristics 

(T

amb

 = 25

°

C)

Input (Emitter)

Parameter

Test Conditions

Symbol

Min.

Typ.

Max.

Unit

Forward voltage

I

F

 = 50 mA

V

F

1.25

1.6

V

Reverse current

V

R

 = 6 V

I

R

10

m

A

Junction capacitance

V

R

 = 0, f = 1 MHz

C

j

50

pF

Output (Detector)

Parameter

Test Conditions

Symbol

Min.

Typ.

Max.

Unit

Collector base voltage

I

C

 = 100 

m

A

V

CBO

90

V

Collector emitter voltage

I

C

 = 1 mA

V

CEO

90

V

Emitter collector voltage

I

E

 = 100 

m

A

V

ECO

7

V

Collector emitter cut-off

current

V

CE

 = 20 V, I

F

 = 0

I

CEO

150

nA

Coupler

Parameter

Test Conditions

Symbol

Min.

Typ.

Max.

Unit

Collector emitter 

saturation voltage

I

F

 = 10 mA, I

C

 = 1 mA

V

CEsat

0.3

V

Cut-off frequency

V

CE

 = 5 V, I

F

 = 10 mA,

R

L

 = 100 

W

f

c

110

kHz

Coupling capacitance

f = 1 MHz

C

k

0.3

pF

Current Transfer Ratio (CTR)

Parameter

Test Conditions

Type

Symbol

Min.

Typ.

Max.

Unit

I

C

/I

F

V

CE

 = 5 V, I

F

 = 1 mA

CNY75(G)A

CTR

0.15

C F

CE

F

CNY75(G)B

CTR

0.3

CNY75(G)C

CTR

0.6

V

CE

 = 5 V, I

F

 = 10 mA

CNY75(G)A

CTR

0.63

1.25

CE

F

CNY75(G)B

CTR

1

2

CNY75(G)C

CTR

1.6

3.2

background image

CNY75(G) Series

Vishay Telefunken

Rev. A4, 11–Jan–99

144

Maximum Safety Ratings 

(according to VDE 0884) see figure 1

This device is used for protective separation against electrical shock only within the maximum safety ratings.

This must be ensured by using protective circuits in the applications.

Input (Emitter)

Parameters

Test Conditions

Symbol

Value

Unit

Forward current

I

si

130

mA

Output (Detector)

Parameters

Test Conditions

Symbol

Value

Unit

Power dissipation

T

amb

 

 25

°

C

P

si

265

mW

Coupler

Parameters

Test Conditions

Symbol

Value

Unit

Rated impulse voltage

V

IOTM

6

kV

Safety temperature

T

si

150

°

C

Insulation Rated Parameters 

(according to VDE 0884)

Parameter

Test Conditions

Symbol

Min.

Typ.

Max.

Unit

Partial discharge test voltage –

Routine test

100%, t

test

 = 1 s

V

pd

1.6

kV

Partial discharge test voltage – t

Tr

 = 60 s, t

test

 = 10 s,

V

IOTM

6

kV

g

g

Lot test (sample test)

Tr

test

(see figure 2)

V

pd

1.3

kV

Insulation resistance

V

IO

 = 500 V

R

IO

10

12

W

V

IO

 = 500 V, 

T

amb

 

 100

°

C

R

IO

10

11

W

V

IO

 = 500 V, 

T

amb

 

 150

°

(construction test only)

R

IO

10

9

W

0

25

50

75

100

125

150

175

200

225

250

275

0

25

50

75

100

125

150

175

P

    – 

T

otal Power Dissipation ( mW

 )

T

amb

 – Ambient Temperature ( 

°

C

)

95 10923

tot

P

si

(mW)

I

si

 (mA)

Figure 1.  Derating diagram 

V

IOTM

V

Pd

V

IOWM

V

IORM

V

t

4

t

3

t

test

t

stres

t

2

t

1

t

0

13930

t

Tr

= 60 s

t

1

, t

2

= 1 to 10 s

t

3

, t

4

= 1 s

t

test 

= 10 s

t

stres

 

= 12 s

Figure 2.  Test pulse diagram for sample test according to

DIN VDE 0884

background image

CNY75(G) Series

Vishay Telefunken

Rev. A4, 11–Jan–99

145

Switching Characteristics of CNY75(G(A

Parameter

Test Conditions

Symbol

Typ.

Unit

Delay time

V

S

 = 5 V, I

C

 = 10 mA, R

L

 = 100 

W

 (see figure 3)

t

d

2.0

m

s

Rise time

S

C

L

(

g

)

t

r

2.5

m

s

Fall time

t

f

2.7

m

s

Storage time

t

s

0.3

m

s

Turn-on time

t

on

4.5

m

s

Turn-off time

t

off

3.0

m

s

Turn-on time

V

S

 = 5 V, I

F

 = 10 mA, R

L

 = 1 k

W

 (see figure 4)

t

on

10.0

m

s

Turn-off time

S

F

L

(

g

)

t

off

25.0

m

s

Switching Characteristics of CNY75(G)B

Parameter

Test Conditions

Symbol

Typ.

Unit

Delay time

V

S

 = 5 V, I

C

 = 10 mA, R

L

 = 100 

W

 (see figure 3)

t

d

2.5

m

s

Rise time

S

C

L

(

g

)

t

r

3.0

m

s

Fall time

t

f

3.7

m

s

Storage time

t

s

0.3

m

s

Turn-on time

t

on

5.5

m

s

Turn-off time

t

off

4.0

m

s

Turn-on time

V

S

 = 5 V, I

F

 = 10 mA, R

L

 = 1 k

W

 (see figure 4)

t

on

16.5

m

s

Turn-off time

S

F

L

(

g

)

t

off

20

m

s

Switching Characteristics of CNY75(G)C

Parameter

Test Conditions

Symbol

Typ.

Unit

Delay time

V

S

 = 5 V, I

C

 = 10 mA, R

L

 = 100 

W

 (see figure 3)

t

d

2.8

m

s

Rise time

S

C

L

(

g

)

t

r

4.2

m

s

Fall time

t

f

4.7

m

s

Storage time

t

s

0.3

m

s

Turn-on time

t

on

7.0

m

s

Turn-off time

t

off

5.0

m

s

Turn-on time

V

S

 = 5 V, I

F

 = 10 mA, R

L

 = 1 k

W

 (see figure 4)

t

on

11

m

s

Turn-off time

S

F

L

(

g

)

t

off

37.5

m

s

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CNY75(G) Series

Vishay Telefunken

Rev. A4, 11–Jan–99

146

Channel I

Channel II

100

W

50

W

+ 5 V

Oscilloscope

R

L w

 1 M

W

C

L v

 20 pF

I

C

= 10 mA ; Adjusted through

input amplitude

IF

IF

R

G= 50 W

t

p

 

tp= 50 ms

T

= 0.01

0

95 10891

Figure 3.  Test circuit, non-saturated operation

Channel I

Channel II

1 k

W

50

W

+ 5 V

Oscilloscope

R

L w

 1 MW

C

L v

 20 pF

I

C

I

F

I

F

R

G

= 50

W

t

p

 

t

p

= 50 

ms

T

= 0.01

0

14944

Figure 4.  Test circuit, saturated operation

t

p

t

t

0

0

10%

90%

100%

t

r

t

d

t

on

t

s

t

f

t

off

I

F

I

C

96 11698

t

p

pulse dura-

tion

t

d

delay time

t

r

rise time

t

on

 (= t

d

 + t

r

)

turn-on time

t

s

storage time

t

f

fall time

t

off

 (= t

s

 + t

f

)

turn-off time

Figure 5.  Switching times

Typical Characteristics 

(T

amb

 = 25

_

C, unless otherwise specified)

0

50

100

150

200

250

300

0

40

80

120

P

     – 

T

otal Power Dissipation ( mW

 )

T

amb

  – Ambient Temperature (

°

C )

96 11700

tot

Coupled device

Phototransistor

IR-diode

Figure 6.  Total Power Dissipation vs. 

Ambient Temperature

0.1

1.0

10.0

100.0

1000.0

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

V

F

 – Forward Voltage ( V )

96 11862

F

I    – Forward Current ( mA

 )

Figure 7.  Forward Current vs. Forward Voltage 

background image

CNY75(G) Series

Vishay Telefunken

Rev. A4, 11–Jan–99

147

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

–30 –20 –10 0

10 20 30 40 50 60 70 80

T

amb

 – Ambient Temperature ( 

°

C

)

96 11918

CTR      – Relative Current 

T

ransfer 

Ratio

rel

V

CE

=5V

I

F

=10mA

Figure 8.  Relative Current Transfer Ratio vs. 

Ambient Temperature

0

25

50

75

1

10

100

1000

10000

I      – Collector Dark Current,

CEO

T

amb

 – Ambient Temperature ( 

°

C )

100

95 11038

with open Base ( nA

 )

V

CE

=30V

I

F

=0

Figure 9.  Collector Dark Current vs. 

Ambient Temperature

1

10

0.001

0.01

0.1

1

I     – Collector Base Current ( mA

 )

CB

I

F

 – Forward Current ( mA )

100

95 11039

V

CB

=5V

Figure 10.  Collector Base Current vs. Forward Current

0.1

1

10

0.01

0.1

1

100

I   – Collector Current ( mA

 )

C

I

F

 – Forward Current ( mA )

100

95 11040

10

V

CE

=5V

Figure 11.  Collector Current vs. Forward Current 

0.1

1

10

0.1

1

10

100

V

CE

 – Collector Emitter Voltage ( V )

100

95 11041

I   – Collector Current ( mA

 )

C

5mA

2mA

1mA

I

F

=50mA

20mA

10mA

CNY75A

Figure 12.  Collector Current vs. Collector Emitter Voltage

0.1

1

10

0.1

1

10

100

V

CE

 – Collector Emitter Voltage ( V )

100

95 11042

I   – Collector Current ( mA

 )

C

5mA

2mA

1mA

I

F

=50mA

20mA

10mA

CNY75B

Figure 13.  Collector Current vs. Collector Emitter Voltage

background image

CNY75(G) Series

Vishay Telefunken

Rev. A4, 11–Jan–99

148

0.1

1.0

10.0

100.0

0.1

1.0

10.0

100.0

V

CE

 – Collector Emitter Voltage ( V

)

96 11919

   

I   – Collector Current ( mA

 )

C

20mA

10mA

5mA

2mA

1mA

I

F

=50mA

CNY75

C

Figure 14.  Collector Current vs. Collector Emitter Voltage

1

10

0

0.2

0.4

0.6

0.8

1.0

V

       – Collector Emitter Saturation 

V

oltage ( 

V

 )

CEsat

I

C

 – Collector Current ( mA )

100

CTR=50%

20%

10%

95 11034

CNY75A

Figure 15.  Coll. Emitter Sat. Voltage vs. Coll. Current

1

10

0

0.2

0.4

0.6

0.8

1.0

V

       – Collector Emitter Saturation 

V

oltage ( 

V

 )

CEsat

I

C

 – Collector Current ( mA )

100

CTR=50%

20%

10%

95 11043

CNY75B

Figure 16.  Coll. Emitter Sat. Voltage vs. Coll. Current

1

10

0

0.2

0.4

0.6

0.8

1.0

V

       – Collector Emitter Saturation 

V

oltage ( 

V

 )

CEsat

I

C

 – Collector Current ( mA )

100

CTR=50%

20%

10%

95 11044

CNY75

C

Figure 17.  Coll. Emitter Sat. Voltage vs. Coll. Current

0.01

0.1

1

10

0

200

400

600

800

1000

h    – DC Current Gain

FE

I

C

 – Collector Current ( mA )

100

95 11035

V

CE

=5V

Figure 18.  DC Current Gain vs. Collector Current

0.1

1

10

1

10

100

1000

CTR – Current 

T

ransfer Ratio ( % )

I

F

 – Forward Current ( mA )

100

95 11036

CNY75A(G)

V

CE

=5V

Figure 19.  Current Transfer Ratio vs. Forward Current

background image

CNY75(G) Series

Vishay Telefunken

Rev. A4, 11–Jan–99

149

0.1

1

10

1

10

100

1000

CTR – Current 

T

ransfer Ratio ( % )

I

F

 – Forward Current ( mA )

100

95 11045

CNY75B(G

)

V

CE

=5V

Figure 20.  Current Transfer Ratio vs. Forward Current

0.1

1

10

1

10

100

1000

CTR – Current 

T

ransfer Ratio ( % )

I

F

 – Forward Current ( mA )

100

95 11046

CNY75C(G)

V

CE

=5V

Figure 21.  Current Transfer Ratio vs. Forward Current

0

5

10

15

0

10

20

30

40

50

I

F

 – Forward Current ( mA )

20

95 11033

t    / t      – 

T

urn on / 

T

urn 

of

T

ime (    s )

of

f

m

on

CNY75A(G)

Saturated Operation

V

S

=5V

R

L

=1k

W

t

off

t

on

Figure 22.  Turn on / off Time vs. Forward Current

0

5

10

15

0

10

20

30

40

50

I

F

 – Forward Current ( mA )

20

95 11048

t    / t      – 

T

urn on / 

T

urn 

of

T

ime (    s )

of

f

m

on

CNY75B(G)

Saturated Operation

V

S

=5V

R

L

=1k

W

t

off

t

on

Figure 23.  Turn on / off Time vs. Forward Current

0

5

10

15

0

10

20

30

40

50

I

F

 – Forward Current ( mA )

20

95 11050

t    / t      – 

T

urn on / 

T

urn 

of

T

ime (    s )

of

f

m

on

CNY75C(G)

Saturated Operation

V

S

=5V

R

L

=1k

W

t

off

t

on

Figure 24.  Turn on / off Time vs. Forward Current

0

2

4

6

I

C

 – Collector Current ( mA )

10

95 11032

t    / t      – 

T

urn on / 

T

urn 

of

T

ime (    s )

of

f

m

on

CNY75A(G)

Non Saturated

Operation

V

S

=5V

R

L

=100

W

t

off

t

on

0

5

10

15

20

8

Figure 25.  Turn on / off Time vs. Collector Current

background image

CNY75(G) Series

Vishay Telefunken

Rev. A4, 11–Jan–99

150

0

2

4

6

I

C

 – Collector Current ( mA )

10

95 11047

t    / t      – 

T

urn on / 

T

urn 

of

T

ime (    s )

of

f

m

on

CNY75B(G)

Non Saturated

Operation

V

S

=5V

R

L

=100

W

t

off

t

on

0

5

10

15

20

8

Figure 26.  Turn on / off Time vs. Collector Current

0

2

4

6

I

C

 – Collector Current ( mA )

10

95 11049

t    / t      – 

T

urn on / 

T

urn 

of

T

ime (    s )

of

f

m

on

CNY75C(G)

Non Saturated

Operation

V

S

=5V

R

L

=100

W

t

off

t

on

0

5

10

15

20

8

Figure 27.  Turn on / off Time vs. Collector Current

XXXXXX

0884

918 A TK 63

15090

Type

Date

Code

(YM)

Coupling

System

Indicator

Company

Logo

Production

Location

Safety

Logo

V

D

E

Figure 28.  Marking example

background image

CNY75(G) Series

Vishay Telefunken

Rev. A4, 11–Jan–99

151

Dimensions of CNY75G in mm

14771

weight: ca. 0.50 g

creepage distance:

y

 8 mm

air path:

y

 8 mm

after mounting on PC board

Dimensions of CNY75 in mm

14770

weight: 0.50 g

creepage distance:

y

 6 mm

air path:

y

 6 mm

after mounting on PC board