background image

TSTA7300

Vishay Telefunken

1 (6)

Rev. 2, 20-May-99

www.vishay.de 

FaxBack +1-408-970-5600

Document Number 81045

GaAlAs IR Emitting Diode in Hermetically Sealed TO18

Case

Description

TSTA7300 is a high efficiency infrared emitting diode

in GaAlAs on GaAlAs technology in a hermetically

sealed TO–18 package. Its glass lens provides a high

radiant intensity without external optics. 

Features

D

High radiant power and radiant intensity

D

Suitable for pulse operation

D

Angle of half intensity  

ϕ

 = 

±

 12

°

D

Peak wavelength 

l

p

 = 875 nm

D

High reliability

D

Good spectral matching to Si photodetectors

94 8642

Applications

Radiation source in near infrared range

Absolute Maximum Ratings

T

amb

 = 25

_

C

Parameter

Test Conditions

Symbol

Value

Unit

Reverse Voltage

V

R

5

V

Forward Current

I

F

100

mA

Peak Forward Current

t

p

/T = 0.5, t

p

 

x

 100 

m

s

I

FM

200

mA

Surge Forward Current

t

p

 

x

 100 

m

s

I

FSM

2.5

A

Power Dissipation

P

V

180

mW

T

case

 

x

 25 

°

C

P

V

500

mW

Junction Temperature

T

j

100

°

C

Storage Temperature Range

T

stg

–55...+100

°

C

Thermal Resistance Junction/Ambient

R

thJA

450

K/W

Thermal Resistance Junction/Case

R

thJC

150

K/W

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TSTA7300

Vishay Telefunken

2 (6)

Rev. 2, 20-May-99

www.vishay.de 

FaxBack +1-408-970-5600

Document Number 81045

Basic Characteristics

T

amb

 = 25

_

C

Parameter

Test Conditions

Symbol

Min

Typ

Max

Unit

Forward Voltage

I

F

 = 100 mA, t

p

 

x

 20 ms

V

F

1.4

1.8

V

Breakdown Voltage

I

R

 = 100 

m

A

V

(BR)

5

V

Junction Capacitance

V

R

 = 0 V, f = 1 MHz, E = 0

C

j

20

pF

Radiant Intensity

I

F

 = 100 mA, t

p

 

x

 20 ms

I

e

10

20

mW/sr

Radiant Power

I

F

 = 100 mA, t

p

 

x

 20 ms

f

e

10

mW

Temp. Coefficient of 

f

e

I

F

 = 100 mA

TK

f

e

–0.7

%/K

Angle of Half Intensity

ϕ

±

12

deg

Peak Wavelength

I

F

 = 100 mA

l

p

875

nm

Spectral Bandwidth

I

F

 = 100 mA

Dl

80

nm

Rise Time

I

F

 = 1.5 A, t

p

/T = 0.01, 

t

p

 

x

 10 

m

s

t

r

300

ns

Fall Time

I

F

 = 1.5 A, t

p

/T = 0.01, 

t

p

 

x

 10 

m

s

t

f

300

ns

Typical Characteristics  (T

amb

 = 25

_

C unless otherwise specified)

0

25

50

75

100

0

200

400

600

P

   – Power Dissipation ( mW

 )

V

T

amb

 – Ambient Temperature ( 

°

C )

125

12790

R

thJA

100

300

500

R

thJC

Figure 1.  Power Dissipation vs. Ambient Temperature

0

20

40

60

80

0

25

50

75

100

125

I   – Forward Current ( mA

 )

F

T

amb

 – Ambient Temperature ( 

°

C )

100

94 7971 e

R

thJA

R

thJC

Figure 2.  Forward Current vs. Ambient Temperature

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Vishay Telefunken

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Document Number 81045

t

p

 – Pulse Duration ( ms )

94 8003 e

10

0

10

1

10

1

10

–1

10

–1

10

0

10

2

10

–2

I   – Forward Current ( 

A

 )

F

t

p

/ T = 0.01

I

FSM

 = 2.5 A ( Single Pulse )

0.05

0.1

0.2

0.5

Figure 3.  Pulse Forward Current vs. Pulse Duration

0

1

2

3

V

F

 – Forward Voltage ( V )

4

94 8005 e

10

1

10

2

10

3

10

4

I   – Forward Current ( mA

 )

F

t

p

 = 100 

ms

t

p

/ T = 0.001

Figure 4.  Forward Current vs. Forward Voltage

0

20

40

60

80

0.7

0.8

0.9

1.0

1.1

1.2

V

      – Relative Forward 

V

oltage

Frel

T

amb

 – Ambient Temperature ( 

°

C )

100

94 7990 e

I

F

 = 10 mA

Figure 5.  Relative Forward Voltage vs.

 Ambient Temperature

I

F

 – Forward Current ( mA )

94 7974 e

10

3

10

1

10

2

10

4

10

0

0.1

1

10

1000

100

I   – Radiant Intensity ( mW/sr )

e

Figure 6.  Radiant Intensity vs. Forward Current

– Radiant Power ( mW

 )

e

I

F

 – Forward Current ( mA )

94 7972 e

F

10

3

10

1

10

2

10

4

10

0

0.1

1

10

1000

100

Figure 7.  Radiant Power vs. Forward Current

–10

10

50

0

100

0

0.4

0.8

1.2

1.6

I       ;

e rel        e rel

T

amb

 – Ambient Temperature ( 

°

C )

140

94 8020 e

F

I

F

 = 20 mA

Figure 8.  Rel. Radiant Intensity\Power vs.

 Ambient Temperature

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TSTA7300

Vishay Telefunken

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Rev. 2, 20-May-99

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Document Number 81045

780

880

l – Wavelength ( nm )

980

94 8000 e

– Relative Radiant Power

e

F

0

0.25

0.5

0.75

1.0

1.25

I

F

 = 100 mA

F

e

(

l)

rel

 = 

F

e

(

l)/F

e

(

l

p

)

Figure 9.  Relative Radiant Power vs. Wavelength 

0.4

0.2

0

0.2

0.4

I        – Relative Radiant Intensity

e rel

0.6

94 8021 e

0.6

0.9

0.8

0

°

30

°

10

°

20

°

40

°

50

°

60

°

70

°

80

°

0.7

1.0

Figure 10.  Relative Radiant Intensity vs.

 Angular Displacement

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TSTA7300

Vishay Telefunken

5 (6)

Rev. 2, 20-May-99

www.vishay.de 

FaxBack +1-408-970-5600

Document Number 81045

Dimensions in mm

96 12179

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TSTA7300

Vishay Telefunken

6 (6)

Rev. 2, 20-May-99

www.vishay.de 

FaxBack +1-408-970-5600

Document Number 81045

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating 

systems with respect to their impact on the health and safety of our employees and the public, as well as their 

impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as

ozone depleting substances ( ODSs ).

The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and

forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban

on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of

ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency ( EPA ) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application

by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the

buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or

indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423